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SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low R DS(ON) = .33 ?
APPLICATIONS
ZVN4306G
D
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
S
PARTMARKING DETAIL -
ZVN4306
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
60
2.1
15
± 20
3
-55 to +150
UNIT
V
A
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
SYMBOL MIN.
60
BV DSS
TYP.
MAX.
UNIT CONDITIONS.
V I D =1mA, V GS =0V
Gate-Source Threshold
Voltage
V GS(th)
1.3
3
V
I D =1mA, V DS = V GS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
I GSS
I DSS
I D(on)
12
20
10
100
nA
μ A
μ A
A
V GS = ± 20V, V DS =0V
V DS =60V, V GS =0V
V DS =48V, V GS =0V, T=125°C (2)
V DS =10V, V GS =10V
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance (1)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
0.7
0.22
0.32
0.33
0.45
350
140
30
8
25
30
16
?
?
S
pF
pF
pF
ns
ns
ns
ns
V GS =10V, I D =3A
V GS =5V, I D =1.5A
V DS =25V,I D =3A
V DS =25 V, V GS =0V, f=1MHz
V DD ≈ 25V, V GEN =10V, I D =3A
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 411
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